IL205AT

Minimum Operating Temperature : - 55 C
Packaging : Reel
Maximum Forward Diode Voltage : 1.5 V
Maximum Operating Temperature : + 100 C
Input Type : DC
Maximum Collector Emitter Voltage : 70 V
Maximum Collector Current : 100 mA
Maximum Collector Emitter Saturation Voltage : 400 mV
Current Transfer Ratio : 80 %
Package / Case : SOIC-8 Narrow
Isolation Voltage : 4000 Vrms
Maximum Power Dissipation : 240 mW


Features:

• High Current Transfer Ratio, I_F=10mA, V_CE=5 V
• IL205AT, 40 80%
• IL206AT, 63 125%
• IL207AT, 100 200%
• IL208AT, 160 320%
• High BVCEO, 70 V
• Isolation Voltage, 2500 VACRMS
• Industry Standard SOIC-8 Surface Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• Underwriters Lab File #E52744 (Code Letter P)




Specifications

Peak Reverse Voltage ..............................6.0 V
Continuous Forward Current ..................60 mA
Power Dissipation at 25°C ...................90 mW
Derate Linearly from 25°C ............1.2 mW/°C




Description

The IL205AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL205/6/7/8 come in a standard SOIC-8 small outline package for surface mounting which makes them ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices.

A specified minimum and maximum CTR of the IL205AT allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 volts gives a higher safety margin compared to the industry standard 30 volts.