IGBT Transistors IGBT PRODUCTS
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Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 2.7 V |
Maximum Gate Emitter Voltage : | +/- 20 V | Continuous Collector Current at 25 C : | 30 A |
Gate-Emitter Leakage Current : | 600 nA | Power Dissipation : | 217 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247-3 |
Packaging : | Tube |