IGBT Transistors 600V HI SPEED SW IGBT
IKP20N60H3: IGBT Transistors 600V HI SPEED SW IGBT
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 1.95 V | Maximum Gate Emitter Voltage : | 20 V | ||
Continuous Collector Current at 25 C : | 20 A | Gate-Emitter Leakage Current : | 100 nA | ||
Power Dissipation : | 170 W | Maximum Operating Temperature : | + 175 C | ||
Package / Case : | PG-TO-220-3 | Packaging : | Tube |