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IKB10N60T

IGBT Transistors LOW LOSS DuoPack 600V 10A

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SeekIC No. : 00143253 Detail

IKB10N60T: IGBT Transistors LOW LOSS DuoPack 600V 10A

IKB10N60T Data Sheet

floor Price/Ceiling Price

US $ .64~.86 / Piece | Get Latest Price
Part Number:
IKB10N60T
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~580
  • 580~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.86
  • $.71
  • $.66
  • $.64
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220-3


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C		 IC 20
10		 A
Pulsed collector current, tp limited by Tjmax ICpu ls 30
Turn off safe operating area
VCE 1200V, Tj 150°C		 - 30
Diode forward current
TC = 25°C
TC = 100°C		 IF 20
10
Diode pulsed current, tp limited by Tjmax IFpuls 30
Gate-emitter voltage VGE ±20 V
Short circuit withstand time1)
VGE = 15V, VCC 400V, Tj 150°C		 tSC 5 µs
Power dissipation
TC=25°C
 Ptot 110 W
Operating Tj -40...+175 °C
storage temperature Tstg -40...+175



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