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IKB01N120H2

IGBT Transistors HIGH SPEED 2 TECH 1200V 1A

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SeekIC No. : 00143846 Detail

IKB01N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 1A

IKB01N120H2 Data Sheet

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Part Number:
IKB01N120H2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-263-3


Features:

• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
• Qualified according to JEDEC2 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current, limited by Tjmax
TC = 25, f = 140kHz
TC = 100, f = 140kHz		 IC 3.2
1.3		 A
Pulsed collector current, tp limited by Tjmax ICpuls 3.5
Turn off safe operating area
VCE 600V, Tj 175		 - 3.5
Diode forward current
TC = 25
TC = 100		 IF 3.2
1.3
Gate-emitter voltage VGE ±20 V
Power dissipation, TC = 25 Ptot 28 W
Operating junction temperature TJ,Tstg -40...+175
Soldering temperature (reflow soldering, MSL1) - 220



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