DescriptionThe following is about the absolute maximum ratings of IKA03NI20H2: (1)Collector-emitter voltage: 1200 V ; (2)Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz: 8.2 A ; (3)Pulsed collector current, tp limited by Tjmax: 9 A; (4)Turn off safe operating area VCE 1200V, T...
IKA03NI20H2: DescriptionThe following is about the absolute maximum ratings of IKA03NI20H2: (1)Collector-emitter voltage: 1200 V ; (2)Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz: 8.2 A ; ...
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The following is about the absolute maximum ratings of IKA03NI20H2: (1)Collector-emitter voltage: 1200 V ; (2)Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz: 8.2 A ; (3)Pulsed collector current, tp limited by Tjmax: 9 A; (4)Turn off safe operating area VCE 1200V, Tj 150°C: 9 A; (5)diode forward current: 9.6 at Tc=25°C and 3.9 at Tc=150°C; (6)Gate-emitter voltage: ±20 A; (7)Power dissipation Tc = 25°C: 29 W ; (8)Operating junction and storage temperature: -40 to +150 °C ; (9)Soldering temperature 1.6mm(0.063 in.) from case for 10s: 260 °C.
The electrical characteristics of the IKA03NI20H2 are: (1)collector-emitter breakdown voltage: 1200V at VGE=0V, IC=300A; (2)collector-emitter saturation voltage: 2.2V typical and 2.8V max at VGE=15V, IC=3A,Tj=25; (3)diode forward voltage: 1.55 at VGE=0, IF=3A, Tc=25°C; (4)gate-emitter threshold voltage: 2.1V min and 3.9V max at VCE=VGE; (5)zero gate voltage collector current: 20A max at VCE=1200V, VGE=0V,Tj=25 or 80 nA max at Tj=150; (6)gate-emitter leakage current: 100nA max at VCE=0V, VGE=20V; (7)transconductance: 2S typical at VCE=20V, IC=3A.