IHW40T120

Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.3 V
Package / Case : TO-247-3
Collector- Emitter Voltage VCEO Max : 1.2 KV


Description

The IHW40T120 is designed as a low loss duopack IGBT in trench and fieldtop technology with soft, fast recovery anti-parallel emcon HE diode.

IHW40T120 has six features. (1)Short circuit withstand time 10us. (2)Designed for soft switching applications and induction heating. (3)Trench and fieldstop technology for 1200V applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and easy parallel switching capability due to positive temperature coefficiemt in Vce(sat). (4)Very soft, fast recovery anti-parallel emcon HE diode. (5)Low EMI. (6)Application specific optimisation of inverse diode.

Some absolute maximum ratings have been concluded into several points of IHW40T120 as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its DC collector current would be 75A at 25°C and it would be 40A at 100°C. (3)Its pulsed collector current would be 105A. (4)Its turn off safe operating area would be 105A. (5)Its diode forward current would be 31A at 25°C and it would be 19.8A at 100°C. (6)Its diode pulsed current would be 47A. (7)Its diode surge non repetitive current would be 78A at Tc=25°C, tp=10ms, sine halfwave and it would be 200A at Tc=25°C tp<=2.5us sine halfwave and it would be 160A at Tc=100°C, tp<=2.5us sine halfwave. (8)Its gate to emitter voltage would be +/-20V. (9)Its short circuit withstand time would be 10us. (10)Its power dissipation would be 270W. (11)Its operating junction temperature would be from -40°C to 150°C. (12)Its storage temperature range would be from -55°C to 150°C. (13)Its soldering temperature 1.6mm from case for 10 seconds would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of IHW40T120 are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 1200V. (2)Its collector to emitter saturation voltage would be typ 1.8V and max 2.3V at Tj=25°C and it would be typ 2.1V at Tj=125°C and it would be typ 2.3V at Tj=150°C. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!