IGBT Transistors
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Packaging : | Tube |
Parameter | Symbol | Value | Unit |
Collector-emitter voltage | VCE | 1200 | V |
Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz |
IC | 16 10 |
A |
Pulsed collector current, tp limited by Tjmax | ICpuls | 24 | |
Turn off safe operating area VCE 1200V, Tj 150°C |
- | 24 | |
Diode forward current TC = 25°C TC = 100°C |
IF | 11 7 | |
Diode pulsed current, tp limited by Tjmax, Tc = 25°C | IFpuls | 16.5 | |
Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5µs, sine halfwave TC = 100°C, tp 2.5µs, sine halfwave |
IFSM | 28 50 40 |
A |
Gate-emitter voltage | VGE | ±20 | V |
Short circuit withstand time1) VGE = 15V, VCC 1200V, Tj 150°C |
tSC | 10 | µs |
Power dissipation TC = 25°C |
Ptot | 270 | W |
Operating | Tj | -40...+150 | °C |
Storage temperature | Tstg | -55...+150 | |
Soldering temperature 1.6mm(0.063 in.) from case for 10s |
- | 260 | °C |