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IHP10T120

IGBT Transistors

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SeekIC No. : 00143894 Detail

IHP10T120: IGBT Transistors

IHP10T120 Data Sheet

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Part Number:
IHP10T120
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Packaging : Tube    

Description

Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging : Tube


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
Triangular collector peak current (VGS = 15V)
TC = 100°C, f = 32kHz		 IC 16
10		 A
Pulsed collector current, tp limited by Tjmax ICpuls 24
Turn off safe operating area
VCE 1200V, Tj 150°C		 - 24
Diode forward current
TC = 25°C
TC = 100°C		 IF 11
7
Diode pulsed current, tp limited by Tjmax, Tc = 25°C IFpuls 16.5
Diode surge non repetitive current, tp limited by Tjmax
TC  = 25°C, tp = 10ms, sine halfwave
TC  = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave		 IFSM 28
50
40		 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time1)
VGE = 15V, VCC 1200V, Tj 150°C 		tSC 10 µs
Power dissipation
TC = 25°C		 Ptot 270 W
Operating Tj -40...+150 °C
Storage temperature Tstg -55...+150  
Soldering temperature
1.6mm(0.063 in.) from case for 10s		 - 260 °C



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