IGBT Transistors LOW LOSS IGBT TECH 600V 75A
IGW75N60T: IGBT Transistors LOW LOSS IGBT TECH 600V 75A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-247-3 | Packaging : | Tube |
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCE |
600 |
V |
DC collector current, limited by Tjmax TC = 25°C TC = 100°C |
IC |
150 75 |
A |
Pulsed collector current, tp limited by Tjmax |
ICpuls |
225 | |
Turn off safe operating area (VCE 600V, Tj 175°C) |
- |
225 | |
Gate-emitter voltage |
VGE |
±20 |
V |
Short circuit withstand time1) VGE = 15V, VCC 400V, Tj 150°C |
tSC |
5 |
s |
Power dissipation TC = 25°C |
Ptot |
428 |
W |
Operating junction temperature |
Tj |
-40...+175 |
|
Storage temperature |
Tstg |
-55...+175 | |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s |
- |
260 |