IGBT Transistors LOW LOSS IGBT TECH 600V 15A
IGP15N60T: IGBT Transistors LOW LOSS IGBT TECH 600V 15A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220AB-3 | Packaging : | Tube |
Parameter | Symbol | Value | Unit |
Collector-emitter voltage | VCE | 600 | V |
DC collector current, limited by Tjmax TC = 25 TC = 100 |
IC | 30 15 |
A |
Pulsed collector current, tp limited by Tjmax | ICpuls | 45 | |
Turn off safe operating area VCE 600V, Tj 175 | - | 45 | |
Gate-emitter voltage | VGE | ±20 | V |
Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150 |
tSC | 5 | s |
Power dissipation, TC = 25 | Ptot | 130 | W |
Operating junction temperature | Tj | -40...+175 | |
Storage temperature | Tstg | -55...+175 | |
Soldering temperature, 1.6mm (0.063 in.) from case for 10s |