IGBT Transistors LOW LOSS DuoPack 600V 6A
IGP06N60T: IGBT Transistors LOW LOSS DuoPack 600V 6A
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Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | TO-220AB-3 | Packaging : | Tube |
Parameter | Symbol | Value | Unit |
Collector-emitter voltage | VCE | 600 | V |
DC collector current, limited by Tjmax TC = 25 TC = 100 |
IC | 12 6 |
|
Pulsed collector current, tp limited by Tjmax | ICpuls | 18 | |
Turn off safe operating area VCE 600V, Tj 175 |
- | 18 | |
Gate-emitter voltage | VGE | ±20 | V |
Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150 |
tSC | 5 | s |
Power dissipation TC = 25 |
Ptot | 88 | W |
Operating junction temperature | Tj | -40...+175 | |
Storage temperature | Tstg | -55...+175 | |
Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s |
260 |