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IGB01N120H2

IGBT Transistors HIGH SPEED 2 TECH 1200V 1A

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SeekIC No. : 00143308 Detail

IGB01N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 1A

IGB01N120H2 Data Sheet

floor Price/Ceiling Price

US $ .57~.65 / Piece | Get Latest Price
Part Number:
IGB01N120H2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~450
  • 450~900
  • 900~1000
  • Unit Price
  • $.65
  • $.57
  • $.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-263-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-263-3


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
Triangular collector peak current (VGS = 15V)
TC = 100°C, f = 32kHz		 ICpk 3.2
1.3 		A
Pulsed collector current, tp limited by Tjmax ICpuls 3.5
Turn off safe operating area
VCE 1200V, Tj 150°C		 - 3.5
Gate-emitter voltage VGE ±20
Power dissipation
TC = 25°C		 Ptot 28 W
Operating and storage temperature Tj , Tstg -40...+150 °C
Soldering temperature
1.6mm(0.063 in.) from case for 10s		 - 260
225 (for SMD) 		°C



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