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IDTQS3R862

Features: • Enhanced N channel FET with no inherent diode to Vcc• 2.5 bidirectional switches connect inputs to outputs• Zero propagation delay, zero ground bounce• Undershoot clamp diodes on all switch and control inputs• Active high and low enable controls• Bid...

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SeekIC No. : 004373464 Detail

IDTQS3R862: Features: • Enhanced N channel FET with no inherent diode to Vcc• 2.5 bidirectional switches connect inputs to outputs• Zero propagation delay, zero ground bounce• Undershoot...

IDTQS3R862 Data Sheet

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Part Number:
IDTQS3R862
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Enhanced N channel FET with no inherent diode to Vcc
• 2.5 bidirectional switches connect inputs to outputs
• Zero propagation delay, zero ground bounce
• Undershoot clamp diodes on all switch and control inputs
• Active high and low enable controls
• Bidirectional signal flow
• Available in SOIC and QSOP packages


Application

• Hot-swapping, hot-docking (low resistance for PCI and Compact PCI applications)
• Voltage translation (5V to 3.3V)
• Power Conservation
• Capacitance reduction and isloation
• Applications requiring low RON resistance and active high enabling
• Bus Isolation
• Clock Gating


Pinout

Connection Diagram


Specifications

Symbol

Description

Max.
Unit
VTERM(2)
Supply Voltage to Ground
0.5 to +7
V
VTERM(3)
DC Switch Voltage VS
0.5 to +7
V
VTERM(3)
DC Input Voltage VIN
0.5 to +7
V
VAC
AC Input Voltage (pulse width20ns)
-3
V
IOUT
DC Output Current
120
mA
PMAX
Maximum Power Dissipation (TA = 85°C)
0.5
W

TSTG
Storage Temperature
65 to +150
°C

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VCC terminals.
3. All terminals except VCC .




Description

The IDTQS3R862 provides a set of ten high-speed CMOS TTL-compatible bus switches. The very low ON resistance (2.5) of the IDTQS3R862 allows inputs to be connected to outputs without adding propagation delay and without generating additional ground bounce noise. The switches are controlled by active Low Enable (BE) and active High Enable (BE) controls.

The IDTQS3R862 with 2.5 RON resistance is ideal for switching digital buses as well as for hot-plugging, hot-swapping, and hot-docking applications. The low RON resistance of the QS3R862 makes it ideal for PCI, Compact PCI, and VME hot-plugging applications.

The IDTQS3R862 is characterized for operation at -40°C to +85°C.




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