Features: • Enhanced N channel FET with no inherent diode to Vcc• 2.5 bidirectional switches connect inputs to outputs• Zero propagation delay, zero ground bounce• Undershoot clamp diodes on all switch and control inputs• Available in SOIC and QSOP packagesApplication...
IDTQS3R861: Features: • Enhanced N channel FET with no inherent diode to Vcc• 2.5 bidirectional switches connect inputs to outputs• Zero propagation delay, zero ground bounce• Undershoot...
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Symbol |
Description |
Max. |
Unit |
VTERM(2) |
Supply Voltage to Ground |
0.5 to +7 |
V |
VTERM(3) |
DC Switch Voltage VS |
0.5 to +7 |
V |
VTERM(3) |
DC Input Voltage VIN |
0.5 to +7 |
V |
VAC |
AC Input Voltage (pulse width20ns) |
-3 |
V |
IOUT |
DC Output Current |
120 |
mA |
PMAX |
Maximum Power Dissipation (TA = 85°C) |
0.5 |
W |
TSTG |
Storage Temperature |
65 to +150 |
°C |
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VCC terminals.
3. All terminals except VCC .
The IDTQS3R861 provides a set of ten high-speed CMOS TTL-compatible bus switches. The very low ON resistance (2.5) of the QS3R861 allows inputs to be connected without adding propagation delay and without generating additional ground bounce noise. The Bus Enable (BE) signal turns the switches on.
The low ON resistance of the IDTQS3R861 makes it ideal for PCI hotplugging or hot-swapping applications.
The IDTQS3R861 is characterized for operation at -40°C to +85°C.