IDTQS3384

Features: • Enhanced N channel FET with no inherent diode to Vcc• 5Ω bidirectional switches connect inputs to outputs• Zero propagation delay, zero added ground bounce• Undershoot clamp diodes on all switch and control inputs• Two enables control five bits each&...

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IDTQS3384 Picture
SeekIC No. : 004373440 Detail

IDTQS3384: Features: • Enhanced N channel FET with no inherent diode to Vcc• 5Ω bidirectional switches connect inputs to outputs• Zero propagation delay, zero added ground bounce•...

floor Price/Ceiling Price

Part Number:
IDTQS3384
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

• Enhanced N channel FET with no inherent diode to Vcc
• 5Ω bidirectional switches connect inputs to outputs
• Zero propagation delay, zero added ground bounce
• Undershoot clamp diodes on all switch and control inputs
• Two enables control five bits each
• Available in SOIC, QSOP, and TSSOP packages



Application

• Hot-swapping, hot-docking
• Voltage translation (5V to 3.3V)
• Power Conservation
• Capacitance reduction and isloation
• Bus Isolation
• Clock Gating



Pinout

  Connection Diagram


Specifications

Symbol
Description
Max
Unit
VTERM(2)
Supply Voltage to Ground
0.5 to +7
V
VTERM(3)
DC Switch Voltage Vs
0.5 to +7
V
VTERM(3)
DC Input Voltage VIN
0.5 to +7
V
VAC
AC Input Voltage (pulse width 20ns)
3
V
IOUT
DC Output Current
120
mA
PMAX
Maximum Power Dissipation(TA = 85)
0.5
W
TSTG
Storage Temperature
65 to +150



Description

The IDTQS3384 provides a set of ten high-speed CMOS, TTL-compatiblebus switches. The low ON resistance of IDTQS3384 allows inputs to beconnected to outputs without adding propagation delay and without generatingadditional ground bounce. Two banks of 5 switches are controlled byindependent Bus Enable (BE ) signals.

The IDTQS3384 is characterized for operation at -40 to +85.




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