Features: * Enhanced N channel FET with no inherent diode to Vcc*5 bidirectional switches connect inputs to outputs* Zero propagation delay, zero added ground bounce* Undershoot clamp diodes on all switch and control inputs* Bus exchange allows nibble swap* Available in QSOP and SOIC packagesAppli...
IDTQS3383: Features: * Enhanced N channel FET with no inherent diode to Vcc*5 bidirectional switches connect inputs to outputs* Zero propagation delay, zero added ground bounce* Undershoot clamp diodes on all ...
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Symbol | Description | Max | Unit |
VTERM(2) | SupplyVoltage to Ground | 0.5 to +7 | V |
VTERM(3) | DC Switch Voltage VS | 0.5 to +7 | V |
VTERM(3) | DC Input Voltage VIN | 0.5 to +7 | V |
VAC | AC Input Voltage (pulse width 20ns) | 3 | V |
IOUT | DC Output Current | 120 | mA |
PMAX | Maximum Power Dissipation (TA = 85) | 0.5 | W |
TSTG | Storage Temperature | 65 to +150 |
The IDTQS3383 provides ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the IDTQS3383 allows inputs to be connected to outputs without adding propagation delay and without gener-ating additional ground bounce noise. The Bus Enable (BE) signal turns the switches on. The Bus Exchange (BX) signal provides nibble swap of the AB and CD pairs of signals. This exchange configuration allows byte swapping of buses in systems. It can also be used as a 5-wide 2-to-1 multiplexer and to create low delay barrel shifters, etc.
The IDTQS3383 is characterized for operation at -40°C to +85°C.