Features: • Enhanced N channel FET with no inherent diode to Vcc• Very low ON resistance (3 typical)• Zero propagation delay, zero added ground bounce• Fast turn-on/turn-off time• Undershoot clamp diodes on all switch and control inputs• Available in SOIC packag...
IDTQS3306A: Features: • Enhanced N channel FET with no inherent diode to Vcc• Very low ON resistance (3 typical)• Zero propagation delay, zero added ground bounce• Fast turn-on/turn-off ...
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Symbol |
Description |
Max |
Unit |
VTERM(2) |
Supply Voltage to Ground |
0.5 to +7 |
V |
VTERM(3) |
DC Switch Voltage VS |
0.5 to +7 |
V |
VTERM(3) |
DC Input Voltage VIN |
0.5 to +7 |
V |
VAC |
AC Input Voltage (pulse width 20ns) |
3 |
V |
IOUT |
DC Output Current |
120 |
mA |
PMAX |
MaximumPower Dissipation (TA = 85°C) |
0.5 |
W |
TSTG |
Storage Temperature |
65 to +150 |
°C |
The IDTQS3306A provides a set of two high-speed low resistance (3 typical) CMOS switches connecting inputs to outputs without propagation delay and without generating additional ground bounce noise. Individual enables (OE) are used to turn on the switches. The IDTQS3306A is ideal for signal and control switching since the device adds no noise, ground bounce, propagation delay, or significant power consumption to the system. The QS3306A can also be used for analog switching applications such as video.
The IDTQS3306A is characterized for operation at -40°C to +85°C.