Features: * Enhanced N channel FET with no inherent diode to Vcc* Near zero ground bounce* Undershoot clamp diodes on all switch and control inputs* Available in QSOP and SOIC packagesApplication* Hot-swapping, hot-docking* Voltage translation (5V to 3.3V)* Power conservation* Capacitance reductio...
IDTQS32861: Features: * Enhanced N channel FET with no inherent diode to Vcc* Near zero ground bounce* Undershoot clamp diodes on all switch and control inputs* Available in QSOP and SOIC packagesApplication* H...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Description | Max | Unit |
VTERM(2) | Supply Voltage to Ground | 0.5 to +7 | V |
VTERM(3) | DC Switch Voltage Vs | 0.5 to +7 | V |
VTERM(3) | DC Input Voltage VIN | 0.5 to +7 | V |
VAC | AC Input Voltage (pulse width 20ns) | 3 | V |
IOUT | DC Output Current | 120 | mA |
PMAX | Maximum Power Dissipation (TA = 85°C) | 0.5 | W |
TSTG | Storage Temperature | 65 to +150 |
The QS32861 provides a set of ten high speed CMOS, TTL-compatible bus switches. The Bus Enable (BE) signal turns the switches on. The QS32861 includes internal 25 series termination resistors to reduce reflection noise in high speed applications. When closed, the switch acts as the source (series) termination for the driver connected to it.
The QS32861 is characterized for operation at -40°C to +85°C.