IDTAMB0480

Features: • Advanced Memory Buffer for Fully buffered DIMMs• 3.2 and 4 Gbit/s serial speeds (DDR2-533 and 667 DRAM)• Support for up to eight DIMMs per channel• Repeater Mode for extending FB-DIMM links• Northbound and Southbound single lane fail over and channel error...

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IDTAMB0480 Picture
SeekIC No. : 004373372 Detail

IDTAMB0480: Features: • Advanced Memory Buffer for Fully buffered DIMMs• 3.2 and 4 Gbit/s serial speeds (DDR2-533 and 667 DRAM)• Support for up to eight DIMMs per channel• Repeater Mode ...

floor Price/Ceiling Price

Part Number:
IDTAMB0480
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Advanced Memory Buffer for Fully buffered DIMMs
• 3.2 and 4 Gbit/s serial speeds (DDR2-533 and 667 DRAM)
• Support for up to eight DIMMs per channel
• Repeater Mode for extending FB-DIMM links
• Northbound and Southbound single lane fail over and channel error detection
• Voltage and Timing margin high-speed I/O test capability
• Fully Supports the FB-DIMM configuration register set
• Test features supported include:
- Integrated thermal sensor and status indicator
- Supports MEMBIST, IBIST and Virtual Host mode
- Transparent mode and direct access mode for DRAM testing
• Complies with JEDEC Architecture and Protocol Specification
• Available in 655 ball FCBGA package



Specifications

Symbol
Description
Min
Max
Unit
VDD Supply voltage DRAM Interface
-0.5
+2.3
V
VIN(DDR2).
VOUT(DDR2)
Voltage on any DDR2 interface pin relative to Vss(2)
0.5
+2.3
V
IINK Input Clamp Current (VIN < 0 or VIN > VDD)
+30
mA
IOUTK Output Clamp Current(VOUT < 0 or VOUT > VDD)
+30
mA
IOUT Continous Output Current(VOUT = 0 to VDD)
+30
mA
N/A Continuous current through each VDD or GND
+100
mA
VCC Supply voltage for Core and High Speed Interface
-0.3
+1.75
V
TJ Junction Temperature
+125
°C
TSTG Storage Temperature Range
-55
+100
°C

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the evice. This is a stress rating only and functional operation of the device at these or any other conditions above those ndicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed. This value is limited to 2.3V maximum.




Description

The fully buffered dual in-line memory module (FB-DIMM)IDTAMB0480  is the next generation memory architecture to meet the growing memory requirement of servers and workstations. The IDT IDTAMB0480 Advanced Memory Buffer (AMB) chip is the essential building block located on each FB-DIMM. The IDTAMB0480 receives commands and data from the host controller to control and write/read data to/from the DRAMs on the DIMM. Commands and write data are sent southbound from the host controller to AMBs in a daisy chain fashion and interpreted by the target AMB. Status and read data are sent northbound from AMBs to the host controller also in a daisy chain fashion, passing through non-target AMBs. IDTAMB0480 unique channel structure alleviates buffer loading issues common in registered DIMM technology, enabling designers to use a large number of DIMMs within a single system.

IDTAMB0480 complies with the latest JEDEC defined FB-DIMM Architecture and Protocol Specification and supports DDR2-533 and DDR2-667 DRAM.It also enables serial data transfer at 3.2 and 4.0Gbps. The IDTAMB0480 supports servers, workstations, storage devices and communication applications that support the next generation FB-DIMM architecture.




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