Features: ` High density 3 megabit 3.3V static RAM` Low profile 119 lead, 14mm x 22mm BGA (Ball Grid Array)` Fast RAM access times: 10,12,15ns` Single 3.3V power supply` Multiple Vcc & GND pins for maximum noise immunity` Inputs/outputs directly LVTTL compatible` Commercial (0O C to +70O C) In...
IDT7MMV4101: Features: ` High density 3 megabit 3.3V static RAM` Low profile 119 lead, 14mm x 22mm BGA (Ball Grid Array)` Fast RAM access times: 10,12,15ns` Single 3.3V power supply` Multiple Vcc & GND pins ...
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Symbol | Rating | Commercial | Military | Unit |
VCC | Supply Voltage Relative to GND |
-0.5 to +4.6 | -0.5 to +4.6 | V |
VTERM | Terminal Voltagewith Respect toGND | -0.5 to VCC+0.5 | -0.5 to VCC+0.5 | V |
TA | OperatingTemperature | 0 to +70 | -40 to +85 | °C |
TBIAS | TemperatureUnder Bias | -10 to +85 | -10 to +85 | °C |
TSTG | StorageTemperature | 55 to +125 | -55 to +125 | °C |
IOUT | DC OutputCurrent | 50 | 50 | mA |
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The IDT7MMV4101 is a three megabit static RAM constructed on an multilayer laminate substrate using three 3.3V, 128K x 8 (IDT71V124) static RAMS encapsulated in a Ball Grid Array (BGA).
The IDT7MMV4101 is packaged in a plastic BGA. The BGA configuration allows 119 leads to be placed on a package 14mm by 22mm. At a maximum of 3.5mm high, this low-profile surface mount package is ideal for ultra dense systems.
All inputs and outputs of the IDT7MMV4101 are LVTTL compatible and operate from a single 3.3V supply. Full asynchronous circuitry requires no clocks or refresh for operation and provides equal access and cycle times for ease of use.