DescriptionIDT74FST1632384PF connect input and output ports through an n-channel FET. When the gate-to-source junction of this FET is adequately forward-biased the device conducts and the resistance between input and output ports is small. The FST1632384 belong to IDT's family of bus switches. The...
IDT74FST1632384PF: DescriptionIDT74FST1632384PF connect input and output ports through an n-channel FET. When the gate-to-source junction of this FET is adequately forward-biased the device conducts and the resistance...
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IDT74FST1632384PF connect input and output ports through an n-channel FET. When the gate-to-source junction of this FET is adequately forward-biased the device conducts and the resistance between input and output ports is small. The FST1632384 belong to IDT's family of bus switches. The FST1632xxx integrates terminating resistors in the device, thus eliminating the need for external 25 series resistors. The FST1632384 are 20-bit TTL-compatible bus switches. The BEx pins provide enable control. Bus switch devices perform the function of connecting or isolating two ports without providing any inherent current sink or source capability. Thus they generate little or no noise of their own while providing a low resistance path for an external driver. Without adequate bias on the gate-to-source junction of the FET, the FET is turned off, therefore with no VCC applied, the device has hot insertion capability. The low on-resistance and simplicity of the connection between input and output ports reduces the delay in this path to close to zero.
The features of IDT74FST1632384 can be summarized as (1)bus switches provide zero delay paths; (2)extended commercial range of -40°C to +85°C; (3)low switch on-resistance: FST163xxx -5; FST1632xxx-28; (4)TTL-compatible input and output levels; (5)ESD >2000V per MIL-STD-883, method 3015; > 200V using machine model (C = 200pF, R = 0); (6)available in SSOP, TSSOP and TVSOP.
The absolute maximum ratings of IDT74FST1632384 are (1)VTERM(2: VCC, control and switch terminals) terminal voltage with respect to GND: -0.5 to +7.0V; (2)TSTG storage temperature: -65 to +150°C; (3)IOUT maximum continuous channel current: 128 mA.( Stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating condiitions for extended periods may affect reliability).