Features: • 0.5 MICRON CMOS Technology• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)• VCC = 3.3V ±0.3V, Normal Range• VCC = 2.7V to 3.6V, Extended Range• CMOS power levels (0.4W typ. static)• Rail-to-Rail output s...
IDT74FCT3244: Features: • 0.5 MICRON CMOS Technology• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)• VCC = 3.3V ±0.3V, Normal Range• VCC = 2...
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Symbol |
Description |
Max |
Unit |
VTERM(2) |
Terminal Voltage with Respect to GND |
0.5 to +4.6 |
V |
VTERM(3) |
Terminal Voltage with Respect to GND |
0.5 to +7 |
V |
VTERM(4) |
Terminal Voltage with Respect to GND |
0.5 to VCC+0.5 |
V |
TSTG |
Storage Temperature |
65 to +150 |
°C |
IOUT |
DC Output Current |
60 to +60 |
mA |
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Vcc terminals.
3. Input terminals.
4. Outputs and I/O terminals.
The IDT74FCT3244 octal buffer/line drivers are built using advanced dual metal CMOS technology. These high-speed, low-power buffers are designed to be used as memory data and address drivers, clock drivers, and bus-oriented transmitter/receivers. The three-state controls are designed to operate these devices in a dual-nibble or single-byte mode. All inputs are designed with hysteresis for improved noise margin.