IDT74FCT16374AT

Features: SpecificationsDescriptionThe IDT74FCT16374AT 16-bit edge-triggered D-type register is built using advanced dual metal CMOS technology. These high-speed, low-power registers are ideal for use as buffer registers for data synchronization and storage. The Output Enable (xOE) and clock (xCLK...

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SeekIC No. : 004372940 Detail

IDT74FCT16374AT: Features: SpecificationsDescriptionThe IDT74FCT16374AT 16-bit edge-triggered D-type register is built using advanced dual metal CMOS technology. These high-speed, low-power registers are ideal for u...

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Part Number:
IDT74FCT16374AT
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/22

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Description



Features:






Specifications






Description

The IDT74FCT16374AT 16-bit edge-triggered D-type register is built using advanced dual metal CMOS technology. These high-speed, low-power registers are ideal for use as buffer registers for data synchronization and storage. The Output Enable (xOE) and clock (xCLK) controls are organized to operate each device as two 8-bit registers or one 16-bit register with common clock. Flow-through organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin.The FCT16374T is ideally suited for driving high-capacitance loads and low-impedance backplanes. The output buffers are designed with power off disable capability to allow "live insertion" of boards when used as backplane drivers.

The IDT74FCT16374AT has many unique features:The first one is 0.5 MICRON CMOS Technology. The second one is high-speed, low-power CMOS replacement for ABT functions. The third one is typical tSK(o) (Output Skew) < 250ps. The forth one is low input and output leakage 1A (max.). The fifth one is ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0),etc.There are some absolute maximum ratings about it. Terminal Voltage with Respect to GND(VTERM(2)) is 0.5 V to +7 V.Terminal Voltage with Respect to GND(VTERM(3)) is 0.5 V to VCC+0.5 V.Storage Temperature(TSTG) is 65°C to +150°C. DC Output Current(IOUT) is60 mA to +120 mA.

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