Features: • 0.5 MICRON CMOS Technology• Typical tSK(o) (Output Skew) < 250ps• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)• VCC = 3.3V ± 0.3V, Normal Range, or VCC = 2.7V to 3.6V, Extended Range• CMOS power levels (0...
IDT74FCT163373A: Features: • 0.5 MICRON CMOS Technology• Typical tSK(o) (Output Skew) < 250ps• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)•...
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Symbol |
Description |
Max |
Unit |
VTERM(2) |
Terminal Voltage with Respect to GND |
0.5 to +4.6 |
V |
VTERM(3) |
Terminal Voltage with Respect to GND |
0.5 to +7 |
V |
VTERM(4) |
Terminal Voltage with Respect to GND |
0.5 to VCC+0.5 |
V |
TSTG |
Storage Temperature |
65 to +150 |
°C |
IOUT |
DC Output Current |
60 to +60 |
mA |
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Vcc terminals.
3. Input terminals.
4. Outputs and I/O terminals.
The IDT74FCT163373A 16-bit transparent D-type latches are built using advanced dual metal CMOS technology. These high-speed, low-power latches are ideal for temporary storage of data. They can be used for implementing memory address latches, I/O ports, and bus drivers. The Output Enable and Latch Enable controls are organized to operate each device as two 8-bit latches or one 16-bit latch. Flow-through organization of signal pins simplifies layout. All inputs are designed with hysteresis for improved noise margin.
The inputs of IDT74FCT163373A can be driven from either 3.3V or 5V devices. This feature allows the use of these transparent latches as translators in a mixed 3.3V/5V supply system. With xLE inputs high, the FCT163373 can be used as a buffer to connect 5V components to a 3.3V bus.