IDT72V3660

Features:

· Choose among the following memory organizations:Commercial
IDT72V3640 ¾ 1,024 x 36
IDT72V3650 ¾ 2,048 x 36
IDT72V3660 ¾ 4,096 x 36
IDT72V3670 ¾ 8,192 x 36
IDT72V3680 ¾ 16,384 x 36
IDT72V3690 ¾ 32,768 x 36
IDT72V36100 ¾ 65,536 x 36
IDT72V36110 ¾ 131,072 x 36
· 133 MHz operation (7.5 ns read/write cycle time)
· User selectable input and output port bus-sizing
- x36 in to x36 out
- x36 in to x18 out
- x36 in to x9 out
- x18 in to x36 out
- x9 in to x36 out
· Big-Endian/Little-Endian user selectable byte representation
· 5V input tolerant
· Fixed, low first word latency


Pinout




Specifications

Symbol	Rating	Com'l & Ind'l	Unit
VTERM(2)	Terminal Voltagewith respect to GND	-0.5 to +4.5	V
TSTG	StorageTemperature	55 to +125
IOUT	DC Output Current	50 to +50	mA

Description

The IDT72V3660 are exceptionally deep, high speed, CMOS First-In- First-Out (FIFO) memories with clocked read and write controls and a flexible Bus-Matching x36/x18/x9 data flow. These FIFOs offer several key user benefits:
• Flexible x36/x18/x9 Bus-Matching on both read and write ports
• The period required by the retransmit operation is fixed and short.
• The first word data latency period, from the time the first word is written to an empty FIFO to the time it can be read, is fixed and short.
• High density offerings up to 4 Mbit