IDT72V2111

Features: • Choose among the following memory organizations: IDT72V2101  262,144 x 9IDT72V2111  524,288 x 9• Pin-compatible with the IDT72V261/72V271 and the IDT72V281/ 72V291 SuperSync FIFOs• 10ns read/write cycle time (6.5ns access time)• Fixed, low first ...

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IDT72V2111 Picture
SeekIC No. : 004372565 Detail

IDT72V2111: Features: • Choose among the following memory organizations: IDT72V2101  262,144 x 9IDT72V2111  524,288 x 9• Pin-compatible with the IDT72V261/72V271 and the IDT72V281/ 7...

floor Price/Ceiling Price

Part Number:
IDT72V2111
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Choose among the following memory organizations:
   IDT72V2101  262,144 x 9
   IDT72V2111  524,288 x 9
• Pin-compatible with the IDT72V261/72V271 and the IDT72V281/ 72V291 SuperSync FIFOs
• 10ns read/write cycle time (6.5ns access time)
• Fixed, low first word data latency time
• 5V input tolerant
• Auto power down minimizes standby power consumption
• Master Reset clears entire FIFO
• Partial Reset clears data, but retains programmable settings
• Retransmit operation with fixed, low first word data latency time
• Empty, Full and Half-Full flags signal FIFO status
• Programmable Almost-Empty and Almost-Full flags, each flag can default to one of two preselected offsets
• Program partial flags by either serial or parallel means
• Select IDT Standard timing (using EF and FF flags) or First Word Fall Through timing (using OR and IR flags)
• Output enable puts data outputs into high impedance state
• Easily expandable in depth and width
• Independent Read and Write clocks (permit reading and writing simultaneously)
• Available in the 64-pin Thin Quad Flat Pack (TQFP)
• High-performance submicron CMOS technology




Pinout

  Connection Diagram


Specifications

Symbol Rating Com'l & Ind'l Unit
VTERM(2) Terminal Voltage
with respect to GND
0.5 to +4.5 V
TSTG Storage
Temperature
55 to +125
IOUT DC Output Current 50 to +50 mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VCC terminal only.




Description

The IDT72V2111 are exceptionally deep, high speed, CMOS First-In-First-Out (FIFO) memories with clocked read and write controls. These FIFOs offer numerous improvements over previous SuperSync FIFOs, including the following:
• The limitation of the frequency of one clock input with respect to the other has been removed. The Frequency Select pin (FS) has been removed, thus it is no longer necessary to select which of the two clock inputs, RCLK or WCLK, is running at the higher frequency.
• The period required by the retransmit operation is now fixed and short.
• The first word data latency period of the IDT72V2111, from the time the first word is written to an empty FIFO to the time it can be read, is now fixed and short. (The variable clock cycle counting delay associated with the latency period found on previous SuperSync devices has been eliminated on this SuperSync family.) SuperSync FIFOs are particularly appropriate for network, video, telecommunications, data communications and other applications that need to buffer large amounts of data.




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