Features: • Two independent FIFO memories for fully bidirectiona data transfers• 256 x 18 x 2 organization (IDT 72605)• 512 x 18 x 2 organization (IDT 72615)• Synchronous interface for fast (20ns) read and write cycle times• Each data port has an independent clock and...
IDT72615: Features: • Two independent FIFO memories for fully bidirectiona data transfers• 256 x 18 x 2 organization (IDT 72605)• 512 x 18 x 2 organization (IDT 72615)• Synchronous int...
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Symbol |
Rating |
Commercial |
Military |
Unit |
VTERM(2) |
Terminal Voltage with Respectto GND |
0.5 to +7.0 |
0.5 to +7.0 |
V |
TA |
OperatingTemperature |
0 to +70 |
55 to +125 |
V |
TBIAS |
TemperatureUnder Bia |
55 to +125 |
65 to +135 |
°C |
TSTG |
StorageTemperature |
55 to +125 |
65 to +150 |
°C |
IOUT |
DC OutputCurrent |
50 |
50 |
mA |
The IDT72615 are very high-speed, lowpower bidirectional First-In, First-Out (FIFO) memories, with synchronous interface for fast read and write cycle times. The SyncBiFIFOÔ is a data buffer that can store or retrieve information from two sources simultaneously. Two Dual-Port FIFO memory arrays are contained in the SyncBiFIFO; one data buffer for each direction.
The IDT72615 has registers on all inputs and outputs. Data is only transferred into the I/O registers on clock edges, hence the interfaces are synchronous. Each Port has its own independent clock. Data transfers to the I/O registers are gated by the enable signals. The transfer direction for each port is controlled independently by a read/write signal. Individual output enable signals control whether the SyncBiFIFO is driving the data lines of a port or whether those data lines are in a high-impedance state.
Bypass control of the IDT72615 allows data to be directly transferred from input to output register in either direction. The SyncBiFIFO has eight flags. The flag pins are full, empty, almost-full, and almost-empty for both FIFO memories.
The offset depths of the almost-full and almost-empty flags can be programmed to any location.
The IDT72615 is fabricated using IDT's high-speed, submicron CMOS technology.