Features: 32K x 32 memory configurationSupports high performance system speed: Commercial and Industrial: - 11 11ns Clock-to-Data Access (50MHz) - 12 12ns Clock-to-Data Access (50MHz)LBO input selects interleaved or linear burst modeSelf-timed write cycle with global write control (GW), byte write...
IDT71V433: Features: 32K x 32 memory configurationSupports high performance system speed: Commercial and Industrial: - 11 11ns Clock-to-Data Access (50MHz) - 12 12ns Clock-to-Data Access (50MHz)LBO input selec...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Rating |
Value |
Unit |
VTERM(2 ) |
Terminal Voltage with Respect to GND |
0.5 to +4.6 |
V |
VTERM(3 ) |
Terminal Voltage with Respect to GND |
0.5 to VDD+0.5 |
V |
TA |
Operating Temperature |
0 to +70 |
oC |
TBIAS |
Temperature Under Bias |
55 to +125 |
oC |
TSTG |
Storage Temperature |
55 to +125 |
|
PT |
Power Dissipation |
1.2 |
W |
IOUT |
DC Output Current |
50 |
mA |
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VDD, VDDQ and input terminals only.
3. I/O terminals.
The IDT71V433 is a 3.3V high-speed 1,048,576-bit SRAM organized as 32K x 32 with full support of various processor interfaces including the Pentium™ and PowerPC™. The flow-through burst architecture provides cost-effective 2-1-1-1 performance for processors up to 50 MHz.
The IDT71V433 SRAM contains write, data-input, address and control registers. There are no registers in the data output path (flowthrough architecture). Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the extreme end of the write cycle.
The burst mode feature offers the highest level of performance to the system designer, as the IDT71V433 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will flow-through from the array after a clock-to-data access time delay from the rising clock edge of the same cycle. If burst mode operation is selected (ADV=LOW), the subsequent three cycles of output data will be available to the user on the next three rising clock edges. The order of these three addresses will be defined by the internal burst counter and the LBO input pin.
The IDT71V433 SRAM utilizes IDT's high-performance 3.3V CMOS process, and is packaged in a JEDEC Standard 14mm x 20mm 100-pin thin plastic quad flatpack (TQFP).