Features: 256K x 16 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise. Equal access and cycle times Commercial and Industrial: 10/12/15ns One Chip Select plus one Output Enable pin Bidirectional data inputs and outputs directly LVTTL-compatible Low power consu...
IDT71V416VS: Features: 256K x 16 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise. Equal access and cycle times Commercial and Industrial: 10/12/15ns One Chip Select plus o...
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Symbol |
Rating |
Value |
Unit |
VDD |
Supply Voltage Relative to VSS |
0.5 to +4.6 |
V |
VIN, VOUT |
Terminal Voltage Relative to VSS |
0.5 to VDD+0.5 |
V |
TBIAS |
Temperature Under Bias |
55 to +125 |
°C |
TSTG |
Storage Temperature |
55 to +125 |
°C |
PT |
Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
20 |
mA |
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The IDT71V416VS is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT's high-perfomance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs.
The IDT71V416VS has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
The IDT71V416VS is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.