DescriptionThe IDT71V416VL10BEG belongs to IDT71V416 family which is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT's high-perfomance, high-reliability CMOS technology and it has an output enable pin which operates as fast as 5ns, with address access times...
IDT71V416VL10BEG: DescriptionThe IDT71V416VL10BEG belongs to IDT71V416 family which is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT's high-perfomance, high-reliability CMOS...
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The IDT71V416VL10BEG belongs to IDT71V416 family which is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT's high-perfomance, high-reliability CMOS technology and it has an output enable pin which operates as fast as 5ns, with address access times as fast as 10ns. All bidirectional inputs and outputs of the IDT71V416 are LVTTL-compatible and operation is from a single 3.3V supply. This state-of-the-art technology, combined with inno- vative circuit design techniques, provides a cost-effective solution for high- speed memory needs. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation. The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package.
The features of IDT71V416VL10BEG can be summarized as (1)256K x 16 advanced high-speed CMOS static RAM; (2)JEDEC center power / GND pinout for reduced noise.; (3)equal access and cycle times commerci1trial: 10/12/15ns; (4)one chip select plus one output enable pin; (5)bidirectional data inputs and outputs directly LVTTL-compatible; (6)low power consumption via chip deselect; (7)upper and lower byte enable pins; (8)single 3.3V power supply; (9)available in 44-pin, 400 mil plastic SOJ package and a 44- pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x 9mm package..
The absolute maximum ratings of IDT71V416VL10BEG are (1)VDD supply voltage relative to VSS: -0.5 to +4.6 V; (2)VIN, VOUT terminal voltage relative to VSS: -0.5 to VDD+0.5V; (3)TBIAS temperature under bias: -55 to +125°C; (4)TSTG storage temperature: -55 to +125°C; (5)PT power dissipation: 1 W; (6)IOUT DC output current: 50 mA(1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.).