IDT71V3556S

Features: 128K x 36, 256K x 18 memory configurationsSupports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access)ZBTTM Feature - No dead cycles between write and read cyclesInternally synchronized output buffer enable eliminates the need to control OESingle R/W (READ/WRITE) contro...

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SeekIC No. : 004372290 Detail

IDT71V3556S: Features: 128K x 36, 256K x 18 memory configurationsSupports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access)ZBTTM Feature - No dead cycles between write and read cyclesInternal...

floor Price/Ceiling Price

Part Number:
IDT71V3556S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

128K x 36, 256K x 18 memory configurations
Supports high performance system speed - 200 MHz
   (3.2 ns Clock-to-Data Access)
ZBTTM  Feature - No dead cycles between write and read
   cycles
Internally synchronized output buffer enable eliminates the
   need to control OE
Single R/W (READ/WRITE) control pin
Positive clock-edge triggered address, data, and control
   signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW1 -BW4) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%), 3.3V I/O Supply (VDDQ)
Optional- Boundary Scan JTAG Interface (IEEE 1149.1
   compliant)

Packaged in a JEDEC standard 100-pin plastic thin quad
   flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
   ball grid array (fBGA)




Pinout

  Connection Diagram


Specifications


Symbol

Rating
Commercial &Industrial Values Unit

VTERM(2)
Terminal Voltage with Respect to GND
-0.5 to +4.6 V

VTERM(3)
Terminal Voltage with Respect to GND -0.5 to VDD V
VTERM(4.6) Terminal Voltage with Respect to GND -0.5 to VDD +0.5 V

VTERM(50.6)
Terminal Voltage with Respect to GND -0.5 to VDDQ +0.5 V
TA Commercial
Operating Temperature
-0 to +70
Industrial
Operating Temperature
-40 to +85
TBIAS TemperatureUnder Bias
-55 to +125
TSTG Storage Temperature -55 to +125
PT Power Dissipation 2.0 W
IOUT DC Output Current 50 mA



Description

The IDT71V3556S are 3.3V high-speed 4,718,592-bit (4.5 Mega- bit) synchronous SRAMS. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, they have been given the name ZBTTM , or Zero Bus Turnaround.

Address and control signals are applied to the SRAM during one clock cycle, and two cycles later the associated data cycle occurs, be it read or write.

The IDT71V3556S contain data I/O, address and control signal egisters. Output enable is the only asynchronous signal and can be used o disable the outputs at any given time.

A Clock Enable (CEN) pin allows operation of the IDT71V3556S o be suspended as long as necessary. All synchronous inputs are gnored when (CEN) is high and the internal device registers will hold their previous values.

There are three chip enable pins (CE1, CE2, CE2) that allow the user o deselect the IDT71V3556S when desired. If any one of these three are not asserted when ADV/LD is low, no new memory operation can be initiated. However, any pending data transfers (reads or writes) will be completed. The data bus will tri-state two cycles after chip is deselected or a write is initiated.




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