Features: 128K x 36, 256K x 18 memory configurationsSupports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access)ZBTTM Feature - No dead cycles between write and read cyclesInternally synchronized output buffer enable eliminates the need to control OESingle R/W (READ/WRITE) contro...
IDT71V3556S: Features: 128K x 36, 256K x 18 memory configurationsSupports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access)ZBTTM Feature - No dead cycles between write and read cyclesInternal...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
128K x 36, 256K x 18 memory configurations
Supports high performance system speed - 200 MHz
(3.2 ns Clock-to-Data Access)
ZBTTM Feature - No dead cycles between write and read
cycles
Internally synchronized output buffer enable eliminates the
need to control OE
Single R/W (READ/WRITE) control pin
Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW1 -BW4) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%), 3.3V I/O Supply (VDDQ)
Optional- Boundary Scan JTAG Interface (IEEE 1149.1
compliant)
Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA)
Symbol |
Rating |
Commercial &Industrial Values | Unit |
VTERM(2) |
Terminal Voltage with Respect to GND |
-0.5 to +4.6 | V |
VTERM(3) |
Terminal Voltage with Respect to GND | -0.5 to VDD | V |
VTERM(4.6) | Terminal Voltage with Respect to GND | -0.5 to VDD +0.5 | V |
VTERM(50.6) |
Terminal Voltage with Respect to GND | -0.5 to VDDQ +0.5 | V |
TA | Commercial Operating Temperature |
-0 to +70 | |
Industrial Operating Temperature |
-40 to +85 | ||
TBIAS | TemperatureUnder Bias |
-55 to +125 | |
TSTG | Storage Temperature | -55 to +125 | |
PT | Power Dissipation | 2.0 | W |
IOUT | DC Output Current | 50 | mA |
The IDT71V3556S are 3.3V high-speed 4,718,592-bit (4.5 Mega- bit) synchronous SRAMS. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, they have been given the name ZBTTM , or Zero Bus Turnaround.
Address and control signals are applied to the SRAM during one clock cycle, and two cycles later the associated data cycle occurs, be it read or write.
The IDT71V3556S contain data I/O, address and control signal egisters. Output enable is the only asynchronous signal and can be used o disable the outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V3556S o be suspended as long as necessary. All synchronous inputs are gnored when (CEN) is high and the internal device registers will hold their previous values.
There are three chip enable pins (CE1, CE2, CE2) that allow the user o deselect the IDT71V3556S when desired. If any one of these three are not asserted when ADV/LD is low, no new memory operation can be initiated. However, any pending data transfers (reads or writes) will be completed. The data bus will tri-state two cycles after chip is deselected or a write is initiated.