IDT71V256SB

•Ideal for high-performance processor secondary cache
•Fast access times:
-12/15/20ns
•Inputs are 2.5V and LVTTL compatible:  VIH = 1.8V
•Outputs are LVTTL compatible
•Low standby current (maximum):
-2mA full standby
•Small packages for space-efficient layouts:
-28-pin 300 mil SOJ
-28-pin TSOP Type I
•Produced with advanced high-performance CMOS technology
•Single 3.3V(±0.3V) power supply

The IDT71V256SB is a  262,144-bit high-speed static RAM organized as 32K x 8. The improved VIH (1.8V) makes the inputs compatible with 2.5V logic levels.  The IDT71V256SB is otherwise identical to the IDT71V256SA.

The IDT71V256SB has outstanding low power character-istics while at the same time maintaining very high perfor- mance. Address access times of as fast as12 ns are ideal fortag SRAM in secondary cache designs.

When power management logic puts the IDT71V256SB in standby mode, its very low power characteristics contribute to extended battery life. By taking CS HIGH, the SRAM will automatically go to a low power standby mode and will remain in standby as long as CS remains HIGH. Furthermore, under full standby mode (CS at CMOS level, f=0), power consump-tion is guaranteed to always be less than 6.6mW and typically will be much smaller.

The IDT71V256SB is packaged in 28-pin 300 mil SOJ and28-pin300 mil TSOP Type I packaging.