IDT71P79604

Features: ·18Mb Density (2Mx8, 2Mx9, 1Mx18, 512Kx36)·Separate, Independent Read and Write Data Ports- Supports concurrent transactions·Dual Echo Clock Output·2-Word Burst on all SRAM accesses·Multiplexed Address Bus- One Read or one Write request per clock cycle·DDR (Double Data Rate) Data Bus- Tw...

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SeekIC No. : 004372242 Detail

IDT71P79604: Features: ·18Mb Density (2Mx8, 2Mx9, 1Mx18, 512Kx36)·Separate, Independent Read and Write Data Ports- Supports concurrent transactions·Dual Echo Clock Output·2-Word Burst on all SRAM accesses·Multip...

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Part Number:
IDT71P79604
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·18Mb Density (2Mx8, 2Mx9, 1Mx18, 512Kx36)
·Separate, Independent Read and Write Data Ports
- Supports concurrent transactions
·Dual Echo Clock Output
·2-Word Burst on all SRAM accesses
·Multiplexed Address Bus
- One Read or one Write request per clock cycle
·DDR (Double Data Rate) Data Bus
- Two word burst data per clock
·Depth expansion through Control Logic
·HSTL (1.5V) inputs that can be scaled to receive signals from 1.4V to 1.9V.
·Scalable output drivers
- Can drive HSTL, 1.8V TTL or any voltage level from 1.4V to 1.9V.
- Output Impedance adjustable from 35 ohms to 70 ohms
·1.8V Core Voltage (VDD)
·165-ball, 1.0mm pitch, 15mm x 17mm fBGA Package
·JTAG Interface



Specifications

Symbol Rating Value Unit
VTERM Supply Voltage on VDD with
Respect to GND
0.5 to +2.9 V
VTERM Supply Voltage on VDDQ with
Respect to GND
0.5 to VDD+0.3 V
VTERM Voltage on Input terminals with
respect to GND
0.5 to VDD +0.3 V
VTERM Voltage on output and I/O
terminals with respect to GND
0.5 to VDDQ +0.3  
TBIAS Temperature Under Bias 55 to +125
TSTG Storage Temperature 65 to +150
IOUT Continuous Current into Outputs + 20 mA

Notes:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VDDQ must not exceed VDD during normal operation.




Description

The IDT71P79604 Burst of two SIO SRAMs are high-speed synchronous memories with independent, double-data-rate (DDR), read and write data ports with two data items passed with each read or write.

Using independent ports for read and write data access, simplifies system design by eliminating the need for bi-directional buses. All buses associated with the DDRII SIO are unidirectional and can be optimized for signal integrity at very high bus speeds. Memory bandwidth is higher than DDR SRAM with bi-directional data buses as separate read and write ports eliminate bus turn around cycle. Separate read and write ports also enable easy depth expansion. Each port can be selected independantly with a R/W input shared among all SRAMs and provide a new LD load control signal for each bank. The DDRII SIO has scalable output impedance on its data output bus and echo clocks, allowing the user to tune the bus for low noise and high performance.

The IDT71P79604 has a single SDR address bus with multiplexed read and write addresses. The read/write and load control inputs are received on the first half of the clock cycle. The byte and nibble write signals are received on both halves of the clock cycle simultaneously with the data they are controlling on the data input bus.

The IDT71P79604 has echo clocks, which provide the user with a clock that is precisely timed to the data output, and tuned with matching impedance and signal quality. The user can use the echo clock for downstream clocking of the data. Echo clocks eliminate the need for the user to produce alternate clocks with precise timing, positioning, and signal qualities to guarantee data capture. Since the echo clocks are




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