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IDT71L016

Features: •64K x 16 Organization•Wide Operating Voltage Range: 2.7V to 3.6V•Speed Grades: 70ns, 100ns•Low Operating Power: 45mA (max)•Low Standby Power: 5µA (max)•Low-Voltage Data Retention: 1.5V (min)•Available in a 44-pin TSOP packagePinoutSpecific...

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SeekIC No. : 004372232 Detail

IDT71L016: Features: •64K x 16 Organization•Wide Operating Voltage Range: 2.7V to 3.6V•Speed Grades: 70ns, 100ns•Low Operating Power: 45mA (max)•Low Standby Power: 5µA (max)...

IDT71L016 Data Sheet

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Part Number:
IDT71L016
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•64K x 16 Organization
•Wide Operating Voltage Range:  2.7V to 3.6V
•Speed Grades:  70ns, 100ns
•Low Operating Power:  45mA (max)
•Low Standby Power:  5µA (max)
•Low-Voltage Data Retention:  1.5V (min)
•Available in a 44-pin TSOP package


Pinout

Connection Diagram


Specifications

Symbol

Rating

Com'l. and Ind'l

Unit

VTERM(2)

Terminal Voltage with
Respect to VSS

0.5 to+4.6

V

VTERM(3)

Terminal Voltage with
Respect to VSS

0.5 to VDD + 0.5V

V

TBIAS

Temperature Under Bias

55 to +125

oC

TSTG

Storage Temperature

55 to +125

oC

PT

Power Dissipation

1.0

W

IOUT

DC Output Current

20

mA




Description

The IDT71L016 is a 1,048,576-bit very low-power Static RAM organized as 64K x 16.  It is fabricated using IDT's high- reliability CMOS technology.  This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for low-power memory needs.  It uses a 6-transistor memory cell.

All input and output signals of the IDT71L016 are LVTTL-compatible and operation is from a single extended-range 3.3V supply.  This extended supply range makes the device ideally suited for unregulated battery-powered applications. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The IDT71L016 is packaged in a JEDEC standard 44-pin TSOP Type II.




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