IDT7188S35DB_1175248

NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS ay cause permanent damage to the device. This is a stress rating only and unctional operation of the device at these or any other conditions above those ndicated in the operational sections of this specification is not implied. Exposure o absolute maximum rating conditions for extended periods may affect eliability.

The IDT7188S35DB_1175248 is a 65,536-bit high-speed static RAM organized as 6K x 4. It is fabricated using IDT's high-performance, high-reliability echnology - CMOS. This state-of-the-art technology, combined with innovative circuit design techniques, provides a ost effective approach or memory intensive applications.

Access times as fast as 25ns are available. The IDT7188S35DB_1175248 offers a educed power standby mode, ISB1, which is activated when CS goes IGH. This capability significantly decreases power while enhancing ystem reliability. The low-power version (L) version also offers a battery ackup data retention capability where the circuit typically consumes only 0µW operating from a 2V battery.

All inputs and outputs are TTL-compatible and operate from a single V supply. The IDT7188S35DB_1175248 is packaged in a 22-pin, 300 mil ceramic DIP roviding excellent board-level packing densities.

ilitary grade product of the IDT7188S35DB_1175248 is manufactured in compliance with the latest evision of MIL-STD-883, Class B, making it ideally suited to military emperature applications demanding the highest level of performance nd reliability.