Features: ` High-speed (equal access and cycle times) Military: 25/35/45/55/70/85ns (max.)` Low power consumption` Battery backup operation - 2V data retention (L version only)` Available in high-density industry standard 22-pin, 300 mil ceramic DIP` Produced with advanced CMOS technology` Inputs...
IDT7188S: Features: ` High-speed (equal access and cycle times) Military: 25/35/45/55/70/85ns (max.)` Low power consumption` Battery backup operation - 2V data retention (L version only)` Available in high-d...
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Symbol |
Rating |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
0.5 to +7.0 |
V |
TA | Operating Temperature |
-55 to +125 |
|
TBIAS |
Temperature Under Bias |
65 to +135 |
|
TSTG | Storage Temperature |
65 to +150 |
|
PT | Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
50 |
mA |
The IDT7188S is a 65,536-bit high-speed static RAM organized as 16K x 4. It is fabricated using IDT's high-performance, high-reliability technology - CMOS. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications.
Access times as fast as 25ns are available. The IDT7188S offers a reduced power standby mode, ISB1, which is activated when CS goes HIGH. This capability significantly decreases power while enhancing system reliability. The low-power version (L) version also offers a battery backup data retention capability where the circuit typically consumes only 30W operating from a 2V battery.
All inputs and outputs of the IDT7188S are TTL-compatible and operate from a single 5V supply. The IDT7188 is packaged in a 22-pin, 300 mil ceramic DIP providing excellent board-level packing densities.
Military grade product of the IDT7188S is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.