Features: ` High-speed (equal access and cycle times) Military: 25/35/45/55/70/85ns (max.)` Low power consumption` Battery backup operation - 2V data retention (L version only)` Available in high-density industry standard 22-pin, 300 mil ceramic DIP` Produced with advanced CMOS technology` Inputs...
IDT7188L: Features: ` High-speed (equal access and cycle times) Military: 25/35/45/55/70/85ns (max.)` Low power consumption` Battery backup operation - 2V data retention (L version only)` Available in high-d...
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Symbol |
Rating |
Value |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
0.5 to +7.0 |
V |
TA | Operating Temperature |
-55 to +125 |
|
TBIAS |
Temperature Under Bias |
65 to +135 |
|
TSTG | Storage Temperature |
65 to +150 |
|
PT | Power Dissipation |
1.0 |
W |
IOUT |
DC Output Current |
50 |
mA |
The IDT7188L is a 65,536-bit high-speed static RAM organized as 16K x 4. It is fabricated using IDT's high-performance, high-reliability technology - CMOS. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost effective approach for memory intensive applications.
Access times as fast as 25ns are available. The IDT7188L offers a reduced power standby mode, ISB1, which is activated when CS goes HIGH. This capability significantly decreases power while enhancing system reliability. The low-power version (L) version also offers a battery backup data retention capability where the circuit typically consumes only 30W operating from a 2V battery.
All inputs and outputs of the IDT7188L are TTL-compatible and operate from a single 5V supply. The IDT7188 is packaged in a 22-pin, 300 mil ceramic DIP providing excellent board-level packing densities.
Military grade product is manufactured in compliance with the latest revision of IDT7188L, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.