Features: • High speed (equal access and cycle time) - Military: 25/35/45/55/70/85ns (max.)• Low power consumption• Battery backup operation-2V data retention (L version only)• JEDEC standard high-density 22-pin ceramic DIP, 22-pin leadless chip carrier• Produced with...
IDT7187S: Features: • High speed (equal access and cycle time) - Military: 25/35/45/55/70/85ns (max.)• Low power consumption• Battery backup operation-2V data retention (L version only)̶...
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Symbol |
Rating |
Com'l. |
Mil. |
Unit |
VTERM |
Terminal Voltage with Respect to GND |
0.5 to +7.0 |
0.5 to +7.0 |
V |
TA | Operating Temperature |
0 to +7.0 |
55 to +125 |
|
TBIAS |
Temperature Under Bias |
55 to +125 |
65 to +135 |
|
TSTG | Storage Temperature |
55 to +125 |
65 to +150 |
|
PT | Power Dissipation |
1.0 |
1.0 |
W |
IOUT |
DC Output Current |
50 |
50 |
mA |
The IDT7187S is a 65,536-bit high-speed static RAM organized as 64K x 1. It is fabricated using IDT's highperformance, high-reliability CMOS technology. Access times as fast as 25ns are available.
Both the standard (S) and low-power (L) versions of the IDT7187S provide two standby modes-ISB and ISB1. ISB provides low-power operation; ISB1 provides ultra-low-power operation. The low-power (L) version also provides the capability for data retention using battery backup. When using a 2V battery, the circuit typically consumes only 30mW.
Ease of system design is achieved by the IDT7187S with full asynchronous operation, along with matching access and cycle times. The device is packaged in an industry standard 22-pin, 300 mil ceramic DIP, or 22-pin leadless chip carriers.
Military grade product of the IDT7187S is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.