Features: •High-speed address/chip select time-Military: 25/30/35/45/55/70/85/100/120/150ns (max.)-Commercial: 20/25/35/45ns (max.) Low Power only.•Low-power operation•Battery Backup operation - 2V data retention•Produced with advanced high-performance CMOS technology•...
IDT71256S: Features: •High-speed address/chip select time-Military: 25/30/35/45/55/70/85/100/120/150ns (max.)-Commercial: 20/25/35/45ns (max.) Low Power only.•Low-power operation•Battery Back...
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Symbol |
Rating |
Com'l. |
Mil. |
Unit |
VTERM |
Terminal Voltage |
0.5 to +7.0 |
0.5 to +7.0 |
V |
TA |
Operating |
0 to +70 |
55 to +125 |
|
TBIAS |
Temperature Under Bias |
55 to +125 |
65 to +135 |
oC |
TSTG |
Storage Temperature |
55 to +125 |
65 to +150 |
oC |
PT |
Power Dissipation |
1.0 |
1.0 |
W |
IOUT |
DC Output Current |
50 |
50 |
mA |
The IDT71256S is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology.
Address access times as fast as 20ns are available with power consumption of only 350mW (typ.). The circuit of the IDT71256S also offers a reduced power standby mode. When CS goes HIGH,the circuit will automatically go to, and remain in, a low-power standby mode as long as CS remains HIGH. In the full standby mode, the low-power device consumes less than 15µW,typically. This capability provides significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability where the circuit typically consumes only 5µW when operating off a 2Vbattery.
The IDT71256S is packaged in a 28-pin (300 or 600 mil)ceramic DIP, a 28-pin 300 mil J-bend SOlC, and a 28-pin (600mil) plastic DIP, and 32-pin LCC providing high board-level packing densities.
The IDT71256S military RAM is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.