Features: ` True Dual-Ported memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 6.5/7.5/9/12/15ns (max.) Industrial: 7.5ns (max.)` Low-power operation IDT70V9279/69S Active: 429mW (typ.) Standby: 3.3mW (typ.) IDT7...
IDT70V9279S: Features: ` True Dual-Ported memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 6.5/7.5/9/12/15ns (max.) Industrial: 7.5ns (max...
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Symbol | Rating |
Commercial & Industrial |
Unit |
VTERM(2) | Terminal Voltage with Respect to GND |
-0.5 to +4.6 |
V |
TBIAS | Temperature Under Bias |
55 to +125 |
|
TSTG | Storage Temperature |
65 to +150 |
|
TJN | Junction Temperature |
+150 |
|
IOUT | DC Output Current |
50 |
mA |
The IDT70V9279S is a high-speed 32/16K x 16 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times.
With an input data register, the IDT70V9279S has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 429mW of power.