Features: ` True Dual-Ported memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 6.5/7.5/9/12/15ns (max.) Industrial: 7.5ns (max.)` Low-power operation IDT70V9279/69S Active: 429mW (typ.) Standby: 3.3mW (typ.) IDT70V9279/69L Act...
IDT70V9279: Features: ` True Dual-Ported memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 6.5/7.5/9/12/15ns (max.) Industrial: 7.5ns (max.)...
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Symbol | Rating |
Commercial &Industrial |
Unit |
VTERM(2) | Terminal Voltage with Respect to GND |
-0.5 to +4.6 |
V |
TBIAS(3) | Temperature Under Bias |
-55 to +125 |
|
TSTG | StorageTemperature |
-65 to +150 |
|
TJN | Junction Temperature |
+150 |
|
IOUT | DC Output Current |
50 |
mA |
With an input data register, the IDT70V9279/69 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 429mW of power.