Features: ` True Dual-Ported memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 6.5/7.5/9/12/15ns (max.) Industrial: 7.5ns (max.)` Low-power operation IDT70V9279/69S Active: 429mW (typ.) Standby: 3.3mW (typ.) IDT70V9279/69L Act...
IDT70V9269S: Features: ` True Dual-Ported memory cells which allow simultaneous access of the same memory location` High-speed clock to data access Commercial: 6.5/7.5/9/12/15ns (max.) Industrial: 7.5ns (max.)...
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Symbol | Rating |
Commercial &Industrial |
Unit |
VTERM(2) | Terminal Voltage with Respect to GND |
-0.5 to +4.6 |
V |
TBIAS(3) | Temperature Under Bias |
-55 to +125 |
|
TSTG | StorageTemperature |
-65 to +150 |
|
TJN | Junction Temperature |
+150 |
|
IOUT | DC Output Current |
50 |
mA |
With an input data register, the IDT70V9269S has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 429mW of power.