IDT70V914S

Features: High-speed clock-to-data output times Commercial: 20/25ns (max.) Industrial: 20/25ns (max.) Low-power operation IDT70V914SActive: 250 mW (typ.)Standby: 10 mW (typ.) Architecture based on Dual-Port RAM cells Allows full simultaneous access from both ports Synchronous operation 5ns setup ...

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SeekIC No. : 004372159 Detail

IDT70V914S: Features: High-speed clock-to-data output times Commercial: 20/25ns (max.) Industrial: 20/25ns (max.) Low-power operation IDT70V914SActive: 250 mW (typ.)Standby: 10 mW (typ.) Architecture based on ...

floor Price/Ceiling Price

Part Number:
IDT70V914S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

High-speed clock-to-data output times
Commercial: 20/25ns (max.)
Industrial: 20/25ns (max.)
Low-power operation
IDT70V914S
Active: 250 mW (typ.)
Standby: 10 mW (typ.)
Architecture based on Dual-Port RAM cells
Allows full simultaneous access from both ports
Synchronous operation
5ns setup to clock, 1ns hold on all control, data, and address
Data input, address, and control registers
Fast 20ns clock to data out
Self-timed write allows fast cycle times
20ns cycle times, 50MHz operation
 LVTTL-compatible, single 3.3V (+ 0.3V) power supply
Clock Enable feature
Guaranteed data output hold times
Available in an 80-pin TQFP
Industrial temperature range (-40°C to +85°C) is available



Pinout

  Connection Diagram
NOTES:
1. All VCC pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.



Specifications

 

Symbol
Rating
Commercial
& Industrial
Unit
VTERM
Terminal Voltage
with respect to GND
-0.5 to +4.6
V
VTERM
Terminal Voltage
-0.5 to VCC
V
VTER(2)
Temperature
Under Bias
-55 to +125
°C
TSTG
Storage
Temperature
-65 to +150
°C
IOUT
DC Output Current
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VCC +0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.3V.</F



Description

The IDT70V914S is a high-speed 4K x 9 bit synchronous Dual-Port RAM. The memory array is based on Dual-Port memory cells to allow simultaneous access from both ports. Registers on control, data, and address inputs provide low set-up and hold times.

The timing latitude provided by this approach allow systems to be designed with very short cycle times. With an input data register, this device has been optimized for applications having unidirectional data flow or bi-directional data flow in bursts.

The IDT70V914S utilizes a 9-bit wide data path to allow for parity at the user's option. This feature is especially useful in data communication applications where it is necessary to use a parity bit for transmission/ reception error checking. Fabricated using IDT's CMOS high-performance technology, these Dual-Ports typically operate on only 250mW of power at maximum highspeed clock-to-data output times as fast as 20ns.

An automatic power down feature, controlled by CE, permits the on-chip circuitry of each port to enter a very low standby power mode. The IDT70V914S is packaged in an 80-pin TQFP.




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