Features: True Dual-Port memory cells which allow simultaneous access of the same memory location
High-speed access
Commercial: 10/12/15ns (max.)
Industrial: 12/15ns (max.)
Dual chip enables allow for depth expansion without external logic
IDT70V659/58/57 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading
more than one device
M/S = VIH for BUSY output flag on Master,M/S = VIL for BUSY input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus matching compatibility
Supports JTAG features compliant to IEEE 1149.1
LVTTL-compatible, single 3.3V (±150mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)power supply for I/Os and control signals on each port
Available in a 208-pin Plastic Quad Flatpack, 208-ball fine pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (40°C to +85°C) is available for selected speeds
Pinout
Specifications
Symbol
|
Rating |
Commercial
& Industrial |
Unit |
VTERM(2)
(VDD)
|
VDD Terminal Voltage
with Respect to GND |
-0.5 to + 4.6 |
V |
| TBIAS(3) |
Temperature Under Bias |
-55 to +125 |
|
| TSTG |
Storage Temperature |
-65 to +150 |
|
| TJN |
Junction Temperature |
+150 |
|
| IOUT(For VDDQ = 3.3V) |
DC Output Current |
50 |
mA |
| IOUT(For VDDQ = 2.5V) |
DC Output Current |
40 |
mA |
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or 4ns maximum, and is limited to 20mA for the period of VTERM VDD + 150mV.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
DescriptionThe IDT70V659 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.
This device provides two independent ports with separate control,address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.
The IDT70V659 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controlled by the OPT pins. The power supply for the core of the device (VDD) remains at 3.3V.
IDT70V659 Data Sheet
