Features: ` True Dual-Port memory cells which allow simultaneous ccess of the same memory location` High-speed access Commercial: 10/12/15ns (max.) Industrial: 12/15ns (max.)` Dual chip enables allow for depth expansion without external logic` IDT70V659/58/57 easily expands data bus width to 36 b...
IDT70V657S: Features: ` True Dual-Port memory cells which allow simultaneous ccess of the same memory location` High-speed access Commercial: 10/12/15ns (max.) Industrial: 12/15ns (max.)` Dual chip enables all...
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Symbol | Rating |
Commercial & Industrial |
Unit |
VTERM(2) (VDD) |
Terminal Voltage with Respect to GND |
-0.5 to +4.6 |
V |
TBIAS(3) | Temperature Under Bias |
55 to +125 |
|
TSTG | Storage Temperature |
65 to +150 |
|
TJN | Junction Temperature |
+150 |
|
IOUT(For VDDQ = 3.3V) | DC Output Current |
50 |
mA |
IOUT(For VDDQ = 2.5V) | DC Output Current |
40 |
mA |
The IDT70V657S is a high-speed 128/64/32K x 36 AsynchronousDual-Port Static RAM. The IDT70V657S is designed to be usedas a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDTMASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memorysystem applications results in full-speed, error-free operation without theneed for additional discrete logic.
This device provides two independent ports with separate control,address, and I/O pins that permit independent, asynchronous access forreads or writes to any location in memory. An automatic power downfeature controlled by the chip enables (either CE0 or CE1) permit theon-chip circuitry of each port to enter a very low standby power mode.
The IDT70V657S can support an operating voltage of either 3.3Vor 2.5V on one or both ports, controlled by the OPT pins. The power supplyfor the core of the device (VDD) remains at 3.3V.