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IDT70V3389S

Features: ` True Dual-Port memory cells which allow simultaneous ccess of the same memory location` High-speed clock to data access Commercial: 4.2/5/6ns (max.) Industrial: 5/6ns (max)` Pipelined output mode` Counter enable and reset features` Dual chip enables allow for depth expansion without ...

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IDT70V3389S: Features: ` True Dual-Port memory cells which allow simultaneous ccess of the same memory location` High-speed clock to data access Commercial: 4.2/5/6ns (max.) Industrial: 5/6ns (max)` Pipelined ...

IDT70V3389S Data Sheet

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Part Number:
IDT70V3389S
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` True Dual-Port memory cells which allow simultaneous ccess of the same memory location
` High-speed clock to data access
  Commercial: 4.2/5/6ns (max.)
  Industrial: 5/6ns (max)` Pipelined output mode
` Counter enable and reset features
` Dual chip enables allow for depth expansion without additional logic
` Full synchronous operation on both ports
   - 7.5ns cycle time, 133MHz operation (9.6 Gbps bandwidth)
   - Fast 4.2ns clock to data out
   -1.8ns setup to clock and 0.7ns hold on all control, data, and address inputs @ 133MHz
   - Data input, address, byte enable and control registers
   - Self-timed write allows fast cycle time
` Separate byte controls for multiplexed bus and bus matching compatibility
` LVTTL- compatible, single 3.3V (±150mV) power supply for core
` LVTTL- compatible, selectable 3.3V (±150mV)/2.5V (±125mV) power supply for I/Os and control signals on each port
` Industrial temperature range (-40°C to +85°C) is available for selected speeds
` Available in a 128-pin Thin Quad Plastic Flatpack (TQFP),208-pin fine pitch Ball Grid Array, and 256-pin Ball rid Array


Pinout

Connection Diagram


Specifications

Symbol Rating

Commercial
& Industrial
Unit
VTERM(2) Terminal Voltage with Respect to GND
-0.5 to +4.6
V
TBIAS Temperature Under Bias
55 to +125
TSTG Storage Temperature
65 to +150
IOUT DC Output Current
50
mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or ns maximum, and is limited to 20mA for the period of VTERMVDD + 150mV.


Description

The IDT70V3389S is a high-speed 64K x 18 bit synchronous Dual-PortRAM. The memory array utilizes Dual-Port memory cells to allowsimultaneous access of any address from both ports. Registers on control,data, and address inputs provide minimal setup and hold times. The timinglatitude provided by this approach allows systems to be designed with veryshort cycle times. With an input data register, the IDT70V3389S has beenoptimized for applications having unidirectional or bidirectional data flowin bursts. An automatic power down feature, controlled by CE0 and CE1,permits the on-chip circuitry of each port to enter a very low standby powermode.

The IDT70V3389S can support an Ioperating voltage of either 3.3V or 2.5V n one or both ports, controllable by the OPT pins. The power supply for he core of the device (VDD) remains at 3.3V.




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