IDT70V3379S4PRF

Series: -
Operating Temperature: 0°C ~ 70°C
Format - Memory: RAM
Interface: Parallel
Packaging: Tray
Voltage - Supply: 3.15 V ~ 3.45 V
Manufacturer: IDT, Integrated Device Technology Inc
Memory Type: SRAM - Dual Port, Synchronous
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)
Memory Size: 576K (32K x 18)
Speed: 4ns


Pinout




Description

The IDT70V3379S4PRF is a high-speed32K x 18 bit synchronous Dual-PortRAM. The memory array utilizes Dual-Port memory cells to allowsimultaneous access of any address from both ports. Registers on control,data, and address inputs provide minimal setup and hold times. The features of the IDT70V3379S4PRF are: (1)True Dual-Port memory cells which allow simultaneous ccess of the same memory location; (2)High-speed clock to data access; (3)Pipelined output mode; (4)Counter enable and reset features; (5)Dual chip enables allow for depth expansion without additional logic; (6)Full synchronous operation on both ports; (7)Separate byte controls for multiplexed bus and bus matching compatibility; (8)LVTTL- compatible, single 3.3V (±150mV) power supply for core.

The following is about the absolute maximum ratings of IDT70V3379S4PRF: (1)Terminal Voltage with Respect to GND:  -0.5 to +4.6 V ; (2)Temperature Under Bias: 55 to +125 ; (3)Storage Temperature: 65 to +150 ; (4)DC Output Current: 50 mA.

The electrical characteristics of the IDT70V3379S4PRF are: (1)input leakage current: 10A max at VDDQ=max, VIN=0V to VDDQ; (2)output leakage current:  10A max at CE0=VIH or CE1=VIL, VOUT=0V to VDDQ; (3)output low voltage: 0.4V max at IOL=+4mA, VDDQ=min; (4)output high voltage: 2.4V max at IOH=-4mA, VDDQ=min; (5)output low voltage: 0.4V max at IOL=+2mA, VDDQ=min; (6)output high voltage: 2.0V max at IOH=-2mA, VDDQ=min.

 

Parameters:

Technical/Catalog Information	IDT70V3379S4PRF
Vendor	IDT, Integrated Device Technology Inc
Category	Undefined Category
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IDT70V3379S4PRF IDT70V3379S4PRF