IDT70V18L

Features: True Dual-Ported memory cells which allow simultaneous access of the same memory locationHigh-speed access Commercial: 15/20ns (max.) Industrial: 20ns (max.)Low-power operation IDT70V18L Active: 440mW (typ.) Standby: 660µW (typ.)Dual chip enables allow for depth expansion witho...

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SeekIC No. : 004372110 Detail

IDT70V18L: Features: True Dual-Ported memory cells which allow simultaneous access of the same memory locationHigh-speed access Commercial: 15/20ns (max.) Industrial: 20ns (max.)Low-power operation IDT70V1...

floor Price/Ceiling Price

Part Number:
IDT70V18L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/8

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Product Details

Description



Features:

True Dual-Ported memory cells which allow simultaneous
    access of the same memory location
 High-speed access
    Commercial: 15/20ns (max.)
    Industrial: 20ns (max.)
 Low-power operation
    IDT70V18L
        Active: 440mW (typ.)
        Standby: 660µW (typ.)
 Dual chip enables allow for depth expansion without
    external logic
 IDT70V18 easily expands data bus width to 18 bits or
    more using the Master/Slave select when cascading more
    than one device
 M/S = VIH for BUSY output flag on Master,
    M/S = VIL for BUSY input on Slave
 Busy and Interrupt Flags
 On-chip port arbitration logic
 Full on-chip hardware support of semaphore signaling
    between ports
 Fully asynchronous operation from either port
LVTTL-compatible, single 3.3V (±0.3V) power supply
Available in a 100-pin TQFP
Industrial temperature range (40°C to +85°C) is available
    for selected speeds



Pinout

  Connection Diagram   Connection Diagram


Specifications

Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
Terminal Voltage with Respect
to GND
-0.5 to +4.6
V
TBIAS Temperature
Under Bias
-55 to +125
TSTG Storage
Te mp e ra ture
-65 to +150
IOUT DC Output
Current
50
mA



NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to <  20mA for the period of VTERM > Vcc + 0.3V.




Description

The IDT70V18L is a high-speed 64K x 9 Dual-Port Static RAM.  The IDT70V18L is designed to be used as a stand-alone 576K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 18-bit or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 18-bit or wider memory system applications results in fullspeed, error-free operation without the need for additional discrete logic.

This IDT70V18L provides two independent ports with separate control,address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the  chip enables (either CE0  or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.

Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 440mW of power.

The IDT70V18L is packaged in a 100-pin Thin Quad Flatpack (TQFP).




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