Features: True Dual-Ported memory cells which allow simultaneous access of the same memory locationHigh-speed access Commercial: 15/20ns (max.) Industrial: 20ns (max.)Low-power operation IDT70V18L Active: 440mW (typ.) Standby: 660µW (typ.)Dual chip enables allow for depth expansion witho...
IDT70V18L: Features: True Dual-Ported memory cells which allow simultaneous access of the same memory locationHigh-speed access Commercial: 15/20ns (max.) Industrial: 20ns (max.)Low-power operation IDT70V1...
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Symbol |
Rating |
Commercial & Industrial |
Unit |
VTERM(2) |
Terminal Voltage with Respect to GND |
-0.5 to +4.6 |
V |
TBIAS | Temperature Under Bias |
-55 to +125 |
|
TSTG | Storage Te mp e ra ture |
-65 to +150 |
|
IOUT | DC Output Current |
50 |
mA |
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.3V.
The IDT70V18L is a high-speed 64K x 9 Dual-Port Static RAM. The IDT70V18L is designed to be used as a stand-alone 576K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 18-bit or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 18-bit or wider memory system applications results in fullspeed, error-free operation without the need for additional discrete logic.
This IDT70V18L provides two independent ports with separate control,address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.
Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 440mW of power.
The IDT70V18L is packaged in a 100-pin Thin Quad Flatpack (TQFP).