Features: *True Dual-Ported memory cells which allow simultaneous reads of the same memory location*High-speed accessCommercial: 15/20/25/35/55ns (max.)Industrial: 20/25/35/55ns (max.)*Low-power operationIDT70V06S Active: 400mW (typ.) Standby: 3.3mW (typ.)IDT70V06L Active: 380mW (typ.) Standby: 66...
IDT70V06S/L: Features: *True Dual-Ported memory cells which allow simultaneous reads of the same memory location*High-speed accessCommercial: 15/20/25/35/55ns (max.)Industrial: 20/25/35/55ns (max.)*Low-power ope...
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Symbol |
Rating |
Commercial |
Unit |
VTERM(2) |
Terminal Voltage |
0.5 to+4.6 |
V |
TBIAS |
Temperature Under Bias |
55 to +125 |
oC |
TSTG |
Storage Temperature |
55 to +125 |
oC |
IOUT |
DC Output Current |
50 |
mA |
The IDT70V06S/L is a high-speed 16K x 8 Dual-Port Static RAM. TheIDT70V06 is designed to be used as a stand-alone 128K-bit Dual-Port Static RAM or as a combination MASTER/SLAVE Dual-Port Static RAM for 16-bit-or-more word systems. Using the IDT MASTER/SLAVE Dual-Port Static RAM approach in 16-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.
This IDT70V06S/L provides two independent ports with separate control,address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to entera very low standby power mode.
Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 400mW of power.
The IDT70V06S/L is packaged in a ceramic 68-pin PGA and PLCC and a 64-pin thin quad flatpack (TQFP).