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IDT70T653M

Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location` High-speed access Commercial: 10/12/15ns (max.) Industrial: 12ns (max.)` RapidWrite Mode simplifies high-speed consecutive write cycles` Dual chip enables allow for depth expansion without extern...

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SeekIC No. : 004372094 Detail

IDT70T653M: Features: ` True Dual-Port memory cells which allow simultaneous access of the same memory location` High-speed access Commercial: 10/12/15ns (max.) Industrial: 12ns (max.)` RapidWrite Mode simpli...

IDT70T653M Data Sheet

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Part Number:
IDT70T653M
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` True Dual-Port memory cells which allow simultaneous access of the same memory location
` High-speed access
  Commercial: 10/12/15ns (max.)
  Industrial: 12ns (max.)
` RapidWrite Mode simplifies high-speed consecutive write cycles
` Dual chip enables allow for depth expansion without external logic
` IDT70T653M easily expands data bus width to 72 bits or more using the Busy Input when cascading more than one
device
` Busy input for port contention management
` Interrupt Flags
` Full on-chip hardware support of semaphore signaling between ports
` Fully asynchronous operation from either port
` Separate byte controls for multiplexed bus and bus matching compatibility
` Sleep Mode Inputs on both ports
` Single 2.5V (±100mV) power supply for core
` LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port
` Includes JTAG functionality
` Available in a 256-ball Ball Grid Array
` Industrial temperature range (40°C to +85°C) is available for selected speeds


Specifications

Symbol Rating
Commercial
& Industrial
Unit
VTERM
(VDD)		 VDD Terminal Voltage
with Respect to GND
-0.5 to +3.6
V
VTERM(2)
(VDDQ)		 VDDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3
V
VTERM(2)
(INPUTS and I/O's)		 Input and I/O Terminal
Voltage with Respect to GND
-0.3 to VDDQ + 0.3
V
TBIAS(3) Temperature Under Bias
55 to +125
TSTG Storage Temperature
65 to +150
TJN Junction Temperature
+150
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.



Description

The IDT70T653M is a high-speed 512K x 36 Asynchronous Dual- Port Static RAM. The IDT70T653M is designed to be used as a standalone 18874K-bit Dual-Port RAM. This device provides two independent ports with separate control, address, and I/O pins that permit independent,  asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode.

The IDT70T653M has a RapidWrite Mode which allows the designer to perform back-to-back write operations without pulsing the R/W input each cycle. This is especially significant at the 10ns cycle time of the  IDT70T653M, easing design considerations at these high performance levels.

The 70T653M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controlled by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V.




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